Electron-spectroscopic study of vertical In1-xGaxAs quantum dots
Identifieur interne : 019B73 ( Main/Repository ); précédent : 019B72; suivant : 019B74Electron-spectroscopic study of vertical In1-xGaxAs quantum dots
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Abstract
We present the results of a magnetotransport study of vertical In1-xGaxAs quantum dots. We observe a series of current plateaus, due to the quantum dot eigenstates, that exhibit a purely diamagnetic response in magnetic field parallel to the current, and no shift in energy in magnetic field perpendicular to the current. In perpendicular field, a suppression of the current plateaus is observed that is not present in parallel field. We also observe fine structure on the current plateaus and study its magnetic field dependence. We observe that the fine structure moves systematically in voltage with changing magnetic field, in both the perpendicular and parallel field orientations, while the plateau edges only exhibit a diamagnetic shift in parallel field. The current plateau step edge exhibits the expected Fermi-level broadening with temperature whereas the fine structure is observed to be relatively temperature insensitive. This is indicative of tunneling from states in the emitter below the Fermi level. Additionally, thermal activation of subthreshold fine structure is observed. We attribute the origin of this fine structure to the dopant-induced discreteness of the electronic density of states in the emitter. © 1996 The American Physical Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electron-spectroscopic study of vertical In<sub>1-x</sub>Ga<sub>x</sub>As quantum dots</title><author><name sortKey="Sleight, J W" uniqKey="Sleight J">J. W. Sleight</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Hornbeck, E S" uniqKey="Hornbeck E">E. S. Hornbeck</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Deshpande, M R" uniqKey="Deshpande M">M. R. Deshpande</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Wheeler, R G" uniqKey="Wheeler R">R. G. Wheeler</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Reed, M A" uniqKey="Reed M">M. A. Reed</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Bowen, R C" uniqKey="Bowen R">R. C. Bowen</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Eric Jonsson School of Engineering, University of Texas, Dallas, P.O. Box 830688, Richardson, Texas 75083</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Eric Jonsson School of Engineering, University of Texas, Dallas, P.O. Box 830688, Richardson</wicri:cityArea></affiliation></author><author><name sortKey="Frensley, W R" uniqKey="Frensley W">W. R. Frensley</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Eric Jonsson School of Engineering, University of Texas, Dallas, P.O. Box 830688, Richardson, Texas 75083</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Eric Jonsson School of Engineering, University of Texas, Dallas, P.O. Box 830688, Richardson</wicri:cityArea></affiliation></author><author><name sortKey="Randall, J N" uniqKey="Randall J">J. N. Randall</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas 75265</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Central Research Laboratories, Texas Instruments Incorporated, Dallas</wicri:cityArea></affiliation></author><author><name sortKey="Matyi, R J" uniqKey="Matyi R">R. J. Matyi</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas 75265</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Central Research Laboratories, Texas Instruments Incorporated, Dallas</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0100191</idno><date when="1996-06-15">1996-06-15</date><idno type="stanalyst">PASCAL 97-0100191 AIP</idno><idno type="RBID">Pascal:97-0100191</idno><idno type="wicri:Area/Main/Corpus">018D45</idno><idno type="wicri:Area/Main/Repository">019B73</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Diamagnetism</term><term>Doped materials</term><term>Electron spectroscopy</term><term>Electronic structure</term><term>Experimental study</term><term>Fermi level</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Silicon additions</term><term>Temperature dependence</term><term>Theoretical study</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Gallium arséniure</term><term>Indium arséniure</term><term>Structure électronique</term><term>Effet tunnel</term><term>Dépendance température</term><term>Niveau Fermi</term><term>Diamagnétisme</term><term>Spectrométrie électronique</term><term>Matériau dopé</term><term>Addition silicium</term><term>Aluminium arséniure</term><term>7320D</term><term>7340G</term><term>7361E</term><term>Etude expérimentale</term><term>Etude théorique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present the results of a magnetotransport study of vertical In<sub>1-x</sub>Ga<sub>x</sub>As quantum dots. We observe a series of current plateaus, due to the quantum dot eigenstates, that exhibit a purely diamagnetic response in magnetic field parallel to the current, and no shift in energy in magnetic field perpendicular to the current. In perpendicular field, a suppression of the current plateaus is observed that is not present in parallel field. We also observe fine structure on the current plateaus and study its magnetic field dependence. We observe that the fine structure moves systematically in voltage with changing magnetic field, in both the perpendicular and parallel field orientations, while the plateau edges only exhibit a diamagnetic shift in parallel field. The current plateau step edge exhibits the expected Fermi-level broadening with temperature whereas the fine structure is observed to be relatively temperature insensitive. This is indicative of tunneling from states in the emitter below the Fermi level. Additionally, thermal activation of subthreshold fine structure is observed. We attribute the origin of this fine structure to the dopant-induced discreteness of the electronic density of states in the emitter. © 1996 The American Physical Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>53</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electron-spectroscopic study of vertical In<sub>1-x</sub>Ga<sub>x</sub>As quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>SLEIGHT (J. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>HORNBECK (E. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>DESHPANDE (M. R.)</s1></fA11><fA11 i1="04" i2="1"><s1>WHEELER (R. G.)</s1></fA11><fA11 i1="05" i2="1"><s1>REED (M. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>BOWEN (R. C.)</s1></fA11><fA11 i1="07" i2="1"><s1>FRENSLEY (W. R.)</s1></fA11><fA11 i1="08" i2="1"><s1>RANDALL (J. N.)</s1></fA11><fA11 i1="09" i2="1"><s1>MATYI (R. J.)</s1></fA11><fA14 i1="01"><s1>Departments of Applied Physics, Electrical Engineering, and Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Eric Jonsson School of Engineering, University of Texas, Dallas, P.O. Box 830688, Richardson, Texas 75083</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas 75265</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>15727-15737</s1></fA20><fA21><s1>1996-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0100191</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We present the results of a magnetotransport study of vertical In<sub>1-x</sub>Ga<sub>x</sub>As quantum dots. We observe a series of current plateaus, due to the quantum dot eigenstates, that exhibit a purely diamagnetic response in magnetic field parallel to the current, and no shift in energy in magnetic field perpendicular to the current. In perpendicular field, a suppression of the current plateaus is observed that is not present in parallel field. We also observe fine structure on the current plateaus and study its magnetic field dependence. We observe that the fine structure moves systematically in voltage with changing magnetic field, in both the perpendicular and parallel field orientations, while the plateau edges only exhibit a diamagnetic shift in parallel field. The current plateau step edge exhibits the expected Fermi-level broadening with temperature whereas the fine structure is observed to be relatively temperature insensitive. This is indicative of tunneling from states in the emitter below the Fermi level. Additionally, thermal activation of subthreshold fine structure is observed. We attribute the origin of this fine structure to the dopant-induced discreteness of the electronic density of states in the emitter. © 1996 The American Physical Society.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C40G</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Structure électronique</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Electronic structure</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Effet tunnel</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Tunnel effect</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Dépendance température</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Temperature dependence</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Niveau Fermi</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Fermi level</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diamagnétisme</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Diamagnetism</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Spectrométrie électronique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electron spectroscopy</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Matériau dopé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Doped materials</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Addition silicium</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Silicon additions</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2></fC03><fC03 i1="12" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="13" i2="3" l="FRE"><s0>7340G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="14" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Point quantique</s0></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Quantum dots</s0></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Phénomène transport</s0></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Transport processes</s0></fC07><fC07 i1="03" i2="3" l="FRE"><s0>Effet champ magnétique</s0></fC07><fC07 i1="03" i2="3" l="ENG"><s0>Magnetic field effects</s0></fC07><fN21><s1>229</s1></fN21><fN47 i1="01" i2="1"><s0>9711M01148</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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